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Structural and Electrical Properties of Tin and Carbon Co-Implanted Silicon

Published online by Cambridge University Press:  26 February 2011

P. Mei,
M. T. Schmidt,
P. W. Li,
E. S. Yang and
B. J. Wilkens
P. Mei
Affiliation:
Microelectronics Science Laboratories, Columbia University, New York, NY 10027
M. T. Schmidt
Affiliation:
Microelectronics Science Laboratories, Columbia University, New York, NY 10027
P. W. Li
Affiliation:
Microelectronics Science Laboratories, Columbia University, New York, NY 10027
E. S. Yang
Affiliation:
Microelectronics Science Laboratories, Columbia University, New York, NY 10027
B. J. Wilkens
Affiliation:
Bellcore, Red Bank, NJ 07701–7040
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Abstract

The alloy system Six (Sny C1-y )1-x was investigated. In this work, samples were prepared by co-implantation of tin and carbon ions into silicon wafers with dosage range 1015 − 1016cm−2, followed by rapid thermal annealing. Rutherford backscattering channeling, Auger sputter profiling, and secondary ion mass spectrometry were employed to study the crystallinity, chemical composition and depth profiles. A near perfect crystallinity for 0.5% at. of tin and carbon was achieved. To study the electrical properties in the implanted materials, diode I-V measurements were performed. The data show near ideal p-n junctions in the co-implanted region. This work demonstrates promising features of group IV semiconductor synthesis by ion implantation.

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References

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