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Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure

Published online by Cambridge University Press:  10 February 2011

H. Amano,
T. Takeuchi,
S. Sota,
H. Sakai and
I. Akasaki
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
T. Takeuchi
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
S. Sota
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
H. Sakai
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
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Abstract

Structural and optical properties of nitride based heterostructure and quantum well structure were investigated. Both AIGaN and GaInN ternary alloys are found to grow coherently on the underlying GaN layer. Compressive strain of GaInN is found to cause quantum confined Stark effect, thus affects the luminescence properties of nitride-based quantum wells.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996, 1143
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48(1986)353.Google Scholar
2. Nakamura, S., Mukai, T. and Senoh, M., J. Appl. Phys. 71(1992)5543.Google Scholar
3. Moustakas, T. D., Molnar, Rt J., Rei, T., Menon, G. and Eddy, C. R. Jr., Mat. Res. Soc. Symp. Proc., 242(1992)427.Google Scholar
4. Amano, H., Kitoh, M., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys. 28(1989)L2112.Google Scholar
5. Nakamura, S., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys. 30(1991)L1708.Google Scholar
6. Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett. 64(1994)1687.Google Scholar
7. Nakamura, S., Senoh, M., Iwasa, N., and Nagahata, S., Jpn. J. Appl. Phys. 34(1995)L797.Google Scholar
8. Koike, M., Shibata, N., Kato, H., Yamasaki, S., Koide, N., Amano, H. and Akasaki, I., Proc. I st Int.Sym.GaN and Related Materials, Boston, 1995, 395(1995)889.Google Scholar
9. Akasaki, I., Amano, H., Sota, S., Sakai, H., Tanaka, T. and Koike, M., Jpn. J. Appl. Phys. 34(1995)L1517.Google Scholar
10. Nakamura, S., Senoh, M., Nagahata, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35(1996)L74.Google Scholar
11. Itaya, K., Onomura, M., Nishio, J., Sugiura, L., Saito, S., Suzuki, M., Rennie, J., Nunoue, S., Yamamoto, M., Fujimoto, H., Kokubun, Y., Ohba, Y., Hatakoshi, G. and Ishikawa, M., Jpn. J. Appl. Phys., 35(1996)L1315.Google Scholar
12. Akasaki, I., Sota, S., Sakai, H., Tanaka, T., Koike, M. and Amano, H., Electron. Lett. 32(1996)1105.Google Scholar
13. Sota, S., Takeuchi, H., Takeuchi, T., Sakai, H., Amano, H. and Akasaki, I.: unpublished.Google Scholar
14. Koide, Y., Itoh, H., Khan, M. R. H., Hiramatsu, K., Sawaki, N. and Akasaki, I., J. Appl. Phys. 61(1987)4540.Google Scholar
15. Wickenden, D. K., Bargeron, C. B., Bryden, W. A., Miragliova, J. and Kistenmacher, T. J, Appl. Phys. Lett. .65(1994)2024.Google Scholar
16. Yoshida, S., Misawa, S. and Gonda, S., J. Appl. Phys. 53(1982)6844.Google Scholar
17. Osamura, K., Nakajima, K., Murakami, Y., Shingu, P. H. and Otsuki, A., Solid State Commun. 11(1972)617.Google Scholar
18. Nakamura, S. and Mukai, T., J. Vac. Sci. Technol. A13(1995)705.Google Scholar
19. Tsubouchi, K., Sugai, K. and Mikoshiba, N., 1981 Ultrasonic Proc. (IEEE, New York, 1981) 375.Google Scholar
20. Yamaguchi, M., Yagi, T., Azuhata, T., Sota, T., Suzuki, K., Chichibu, S. and Nakamura, S., to be published in J.Phys.Condens.Matter.Google Scholar
21. Martin, G., Botchkarev, A., Rocket, A. and Morkoc, H., Appl. Phys. Lett. 68(1996)2541.Google Scholar
22. Ninomiya, S. and Adachi, S., J. Appl. Phys. 78(1995)1183.Google Scholar
23. Leszczynski, L., Teisseyre, H., Suski, T., Grzegory, I., Bockowski, M., Jun, J., Porowski, S., Pakula, K., Baranowski, J. M., Foxon, C. T. and Chueng, T. S., Appl. Phys. Lett. 69(1996)73.Google Scholar
24. Detchprohm, T., Hiramatsu, K., Itoh, K. and Akasaki, I., Jpn. J. Appl. Phys. 31(1992)L1454.Google Scholar
25. Matthews, J. W. and Blakeslee, A. E., I. Crystal Growth 32(1974)265.Google Scholar
26. Fischer, A., Kuhne, H. and Richter, H., Phys. Rev. Lett., 73(1994)2712.Google Scholar
27. Bykhovski, A. D., Kaminski, V. V., Sur, M. S., Chen, Q. C. and Khan, M. A., Appl. Phys. Let., 68(1996)818.Google Scholar