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Structural Changes in Amorphous Silicon Annealed at Low Temperatures

Published online by Cambridge University Press:  17 March 2011

Branko Pivac,
Pavo Dubček,
Ognjen Milat and
Ivan Zulim
Branko Pivac
Affiliation:
Rudjer Bošković Institute, P.O. Box 180, HR-10000 Zagreb, Croatia
Pavo Dubček
Affiliation:
Rudjer Bošković Institute, P.O. Box 180, HR-10000 Zagreb, CroatiaSinchrotrone Trieste, SS 14km 163.5, I-34012 Basovizza (TS), Italy
Ognjen Milat
Affiliation:
Institute of Physics, P.O. Box 1010, HR-10000 Zagreb, Croatia
Ivan Zulim
Affiliation:
Faculty of Electrical and Mechanical Engineering, and Naval Architecture, University of Split, R. Bosškovića b.b. HR-21000 Split, Croatia
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Abstract

The hydrogen dilution in the course of production of amorphous silicon (a-Si) influences its structural properties, which affect significantly light-induced degradation. We used FTIR, X-ray reflectivity and GISAXS analysis to monitor the structural changes occurring during the low temperature annealing of undoped a-Si:H films. FTIR results show that upon annealing at very low temperatures, hydrogen is moved from its positions (voids) where it was accumulated unbonded to silicon and is subsequently trapped at dangling bonds, enhancing disorder. X-ray reflectivity and GISAXS measurements confirmed the enhancement of the void size.

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