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Structural Implications for Optimizing A-Sige:H Alloys

Published online by Cambridge University Press:  25 February 2011

M.B. Schubert,
K. Eberhardt and
G.H. Bauer
M.B. Schubert
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R. Germany
K. Eberhardt
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R. Germany
G.H. Bauer
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R. Germany
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Abstract

Detailed structural investigations have been performed on a-Si1−xGex:H in 0 ≤ × ≤ l namely Raman, X-ray Photoelectron, and Photothermal Deflection Spectroscopies, which reveal the silicon sub-matrix to be considerably more rigid than the germanium one. In Si-Ge dominated networks distinct deviations from an overall random distribution of Si and Ge atoms can be deduced from a semi-quantitative analysis of the Raman data.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990, 121
Copyright
Copyright © Materials Research Society 1990

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References

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