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Structural Investigations of Self-Assembled Ge-Dots by X-Ray Diffraction and Reflection

Published online by Cambridge University Press:  03 September 2012

A.A. Darhuber,
V. Holy,
J. Stangl,
G. Bauer,
P. Schittenhelm and
G. Abstreiter
A.A. Darhuber
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria.
V. Holy
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria.
J. Stangl
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria.
G. Bauer
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria.
P. Schittenhelm
Affiliation:
Walter Schottky Institut, TU München, Am Coulombwall 2, D-85748 Garching, Germany.
G. Abstreiter
Affiliation:
Walter Schottky Institut, TU München, Am Coulombwall 2, D-85748 Garching, Germany.
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Abstract

Self-organized Ge-dots on (001)-oriented Si-substrates have been studied using two-dimensionally resolved high resolution x-ray diffraction and reflectivity. The degree of the vertical correlation of the dot positions ("stacking") has been derived as well as a lateral ordering of the dots in a (disordered) square array with main axes parallel to ]100] and ]010].

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References

1 Eaglesham, D. J., Cerullo, M., Phys Rev. Lett. 64, 1943 (1990).Google Scholar
2 Mo, Y.-W., Savage, D. E., Swartzentruber, B. S., and Lagally, M. G., Phys Rev. Lett. 65, 1020 (1990).Google Scholar
3 Xie, Q., Madhukar, A., Chen, P., and Kobayashi, N. P., Phys Rev. Lett. 75, 2542 (1995).Google Scholar
4 Tersoff, J., Teichert, C., and Lagally, M. G., Phys Rev. Lett. 76, 1675 (1996); and C. Teichert, M. G.Lagally, L. J.Peticolas, J. C.Bean, and J.Tersoff, Phys. Rev. B 53, 16334 (1996).Google Scholar
5 Sunamura, H., Usami, N., Shiraki, Y., and Fukatsu, S., Appl Phys. Lett. 66, 3024 (1995).Google Scholar
6 Schittenhelm, P., Gail, M., Brunner, J., Nützel, J. F., and Abstreiter, G., Appl Phys. Lett. 67, 1292 (1995).Google Scholar
7 Apetz, R., Vescan, L., Hauptmann, A., Dieker, C., Lüth, H., Appl. Phys. Lett. 66, 445 (1995).Google Scholar
8 Theiss, S. K., Chen, D. M., and Golovchenko, J. A., ApplPhys. Lett. 66, 448 (1995).Google Scholar
9 Baribeau, J.-M., J Cryst. Growth 157, 52 (1995).Google Scholar
10 Holy, V., Darhuber, A. A., Bauer, G., Wang, P. D., Song, Y. P., Sotomayor-Torres, C. M., Holland, M. C., Phys Rev. B 52, 8348 (1995).Google Scholar
11 Shen, Q., Umbach, C. C., Weselak, B., and Blakely, J. M., Phys Rev. B 53, R4237 (1996).Google Scholar
12 Schittenhelm, P., Abstreiter, G., Darhuber, A. A., Bauer, G., Werner, P., and Kosogov, A., Thin Solid Films, in print.Google Scholar
13 Williams, A. A., Thornton, J. M. C., Macdonald, J. E., van Sifhout, R. G., vanderVeen, J. F., Finney, M. S., Johnson, A. D., Norris, C., Phys Rev. B 43, 5001 (1991).Google Scholar
14 Steinfart, A. J., Scholte, P. M., Ettema, A., Tuinstra, F., Nielsen, M., Landemark, E., Smilgies, D.-M., Feidenhans’l, R., Falkenberg, G., Seehofer, L., Johnson, R. L., Phys Rev. Lett. 77, 2009 (1996).Google Scholar
15 Holy, V., Baumbach, T., Phys Rev. B 51, 10668 (1994) and references therein.Google Scholar
16 Schittenhelm, P., et al. , to be published.Google Scholar