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Structural Study on Crystallization of a-Ge Using Exafs

Published online by Cambridge University Press:  26 February 2011

Masatoshi Wakagi,
T. Hirano,
M. Hanazono,
M. Chigasaki,
O. Abe and
A. Nakano
Masatoshi Wakagi
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi-shi, 319-12 Japan
T. Hirano
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi-shi, 319-12 Japan
M. Hanazono
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi-shi, 319-12 Japan
M. Chigasaki
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi-shi, 319-12 Japan
O. Abe
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totuka-ku, Yokohama, 244 Japan
A. Nakano
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totuka-ku, Yokohama, 244 Japan
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Abstract

Extended x-ray absorption fine structure (EXAFS) measurements were made on a-Ge and a-Ge:H films which were prepared by sputtering and were annealed at temperatures between 300 and 450° C.The first nearest neighbor distance and the Debye-valler factor were investigated. These values decrease rapidly on the crystallization of the samples. The relationship between them was analyzed in respect of tvo-body potential. The potential of amorphous state is considered to be affected by unharmonic term.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988, 91
Copyright
Copyright © Materials Research Society 1988

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