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The Structure of Al/GaAs Interfaces

Published online by Cambridge University Press:  26 February 2011

Zuzanna Liliental-Weber,
C. Nelson,
R. Gronsky,
J. Washburn and
R. Ludeke
Zuzanna Liliental-Weber
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
C. Nelson
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
R. Gronsky
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
R. Ludeke
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The structure of Al/GaAs interfaces was investigated by high resolution electron microscopy. The Al layers Were deposited in a molecular beam epitaxy chamber with a vacuum base pressure of <1×10∼8 Pa. The GaAs substrate temperature varied during Al deposition from -30°C to 400°C. Deposition of Al on cold substrates £25°C resulted in epitaxial growth of (001) Al on (001) GaAs. Droplets of Ga were observed in samples with the substrate temperature at -30°C (1×2) and 0°C (c(2×8)). Postannealing of the last sample caused formation of the AlGaAs phase. Deposition of Al on hot substrates (150°C and 400°C) resulted in the formation of the AlGaAs phase, which separated (110) oriented Al from (001)GaAs.

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References

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