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Structure of Chemically Passivated Semiconductor Surfaces Determined Using X-Ray Absorption Spectroscopy

Published online by Cambridge University Press:  10 February 2011

A. P. Hitchcock,
T. Tyliszczak,
Z. H. Lu,
P. Brodersen and
M. W. C. Dharmawardana
A. P. Hitchcock
Affiliation:
Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON L8S 4M1
T. Tyliszczak
Affiliation:
Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON L8S 4M1
Z. H. Lu
Affiliation:
Dept. of Metallurgy and Materials Science, University of Toronto, Toronto, ON M5S 3E4
P. Brodersen
Affiliation:
Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON L8S 4M1
M. W. C. Dharmawardana
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON KIA 0R6
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Abstract

The structure of monolayer-passivated single crystal semiconductor surfaces has been studied using synchrotron radiation X-ray absorption fine structure spectroscopy (XAFS). The near edge and extended fine structure signals, supported in some cases by first-principles calculations, have been used to investigate Ge(111)-Cl; GaAs(111)-Cl; GaAs(111)A-S, GaAs(111)B-S and GaAs(001)-S. The use of a solid state Ge X-ray fluorescence array detector has led to significant improvements in data quality and thus structural accuracy. The relationship between the derived surface structures and the development of improved passivated surfaces is discussed.

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References

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