Hostname: page-component-7b7567c8c-lpg2g Total loading time: 0 Render date: 2026-11-15T09:48:52.072Z Has data issue: false hasContentIssue false
  • English
  • Français

Studies of Compositional Variations in Germanium Quantum Dots Grown on Silicon

Published online by Cambridge University Press:  17 March 2011

Alan D.F. Dunbar,
Matthew P. Halsall,
Uschi Bangert,
Alan Harvey,
Philip Dawson,
Bruce A. Joyce,
Jing Zhang and
Isabel Berbezier
Alan D.F. Dunbar
Affiliation:
Department of Physics, UMIST, Manchester M60 1QD., United Kingdom
Matthew P. Halsall
Affiliation:
Department of Physics, UMIST, Manchester M60 1QD., United Kingdom
Uschi Bangert
Affiliation:
Department of Physics, UMIST, Manchester M60 1QD., United Kingdom
Alan Harvey
Affiliation:
Department of Physics, UMIST, Manchester M60 1QD., United Kingdom
Philip Dawson
Affiliation:
Department of Physics, UMIST, Manchester M60 1QD., United Kingdom
Bruce A. Joyce
Affiliation:
Department of Physics, The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom
Jing Zhang
Affiliation:
Department of Physics, The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom
Isabel Berbezier
Affiliation:
CRMC2, Campus de Luminy, Case 913, F13288 Marseille Cedex 9, France
Get access

Abstract

We report optical and scanning transmission electron microscopy studies of germanium dots grown on silicon. In an attempt to control the self-organized growth process and promote dot size uniformity the dot layers were grown on a 4.5nm Si0.6Ge0.4 alloy template layer. Photoluminescence results indicate the formation of carrier confining Ge rich islands, whilst Raman scattering results indicate the presence of an alloy throughout the structures formed. The samples were studied in the UK high resolution scanning transmission electron microscopy facility at Liverpool, UK. Energy dispersive analysis of individual line scans through the sample show that the structures are composed of an alloy throughout with an asymmetric distribution of Germanium in the dots and in the wetting layer close to the dots. We discuss the results in the light of the proposed growth mode for these dots and conclude that attempts to manipulate the composition of these dots during growth may be problematic due to the self-organized nature of their formation.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Harris, L., Mowbray, D.J., Skolnick, M.S., Hopkinson, M., Hill, G.. Appl. Phys. Lett. 73, 969 (1998).Google Scholar
2. Fukatsu, S., Sunamura, H., Shiraki, Y., Komiyama, S.. Appl. Phys. Lett. 71, 258 (1997).Google Scholar
3. Kästner, M. and Voigtländer, B., Phys. Rev. Lett. 82, 2745 (1999).Google Scholar
4. Sumamura, H., Usami, N., Shiraki, Y. and Fukatsu, S., Appl. Phys. Letts. 66 3024 (1995)Google Scholar
5. Medeiros-Ribeiro, G., Bratovski, A.M., Kamins, T.I., Ohlberg, D.A.A. and Williams, R.S., Science 279, 353 (1998)Google Scholar
6. Ikeda, A., Sumitomo, K., Nishioka, T., Yasue, T., Koshikawa, T. anf Kido, Y.. Surf. Sci. 385 200 (1997)Google Scholar
7. Wolf, I. De, Vanhellemont, J., Romano-Rodriguez, A., Norström, H. and Maes, H.E.. L. Appl. Phys. 71, 898 (1992)Google Scholar
8. Cedeira, F., Pinczuk, A., Bean, J.C., Bartlogg, B. and Wilson, B.A.. Appl. Phys. Lett. 45, 1138 (1984).Google Scholar
9. Robbins, D.J., Canham, L.T., Barnett, S.J., Pitt, A.D. and Calcott, P., J. Appl. Phys. 71, 1407 (1992).Google Scholar
10. Usami, N., Miura, M., Ito, Y., Araki, Y. and Shiraki, Y.. Appl. Phys. Lett. 77, 217 (2000).Google Scholar