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A Study on Hermetic Glass Sealing Using a Modified Direct Bonding Method

Published online by Cambridge University Press:  15 February 2011

B. K. Ju,
C. G. Ko,
Y. H. Lee,
I. B. Kang,
P. White,
N. Samaan,
M. Haskard and
M. H. Oh
B. K. Ju
Affiliation:
Div.Electronics and Information Technology, KIST, P.O.Box 131, CheongRyang, Seoul 130–650, Korea, bkju@kistmail.kist.re.kr
C. G. Ko
Affiliation:
Div.Electronics and Information Technology, KIST, P.O.Box 131, CheongRyang, Seoul 130–650, Korea, bkju@kistmail.kist.re.kr
Y. H. Lee
Affiliation:
Div.Electronics and Information Technology, KIST, P.O.Box 131, CheongRyang, Seoul 130–650, Korea, bkju@kistmail.kist.re.kr
I. B. Kang
Affiliation:
Microelectronics Centre, University of South Australia, Warrendi Rd. The Levels, SA5095, Australia, noel.samaan@unisa.edu.au
P. White
Affiliation:
Microelectronics Centre, University of South Australia, Warrendi Rd. The Levels, SA5095, Australia, noel.samaan@unisa.edu.au
N. Samaan
Affiliation:
Microelectronics Centre, University of South Australia, Warrendi Rd. The Levels, SA5095, Australia, noel.samaan@unisa.edu.au
M. Haskard
Affiliation:
Microelectronics Centre, University of South Australia, Warrendi Rd. The Levels, SA5095, Australia, noel.samaan@unisa.edu.au
M. H. Oh
Affiliation:
Div.Electronics and Information Technology, KIST, P.O.Box 131, CheongRyang, Seoul 130–650, Korea, bkju@kistmail.kist.re.kr
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Abstract

This paper presents the process and experimental results about the improved initial bonding between #7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm2) through 250 °C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250 °C.

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