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Sub-Micron Mesotaxial CoSi2 Wires

Published online by Cambridge University Press:  25 February 2011

J. Alex Liddle,
Neil M. Zimmerman,
Alice E. White,
Ken T. Short and
Linus Fetter
J. Alex Liddle
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
Neil M. Zimmerman
Affiliation:
Now at Naval Research Labs, Code 5130, Washington, DC 20375–5000
Alice E. White
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
Ken T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
Linus Fetter
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
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Abstract

Transition metal suicides are receiving an increasing amount of attention as materials for VLSI interconnects because of their low resistivities and ease of integration with silicon. A recently invented technique, mesotaxy, allows the production of buried single-crystal suicide layers in silicon.

Buried suicide layers made by implantation into (100) Si wafers can be patterned by restricting the implant with an oxide mask, giving great flexibility in the types of features that can be produced. We have fabricated simple microstructures to investigate the formation and properties of mesotaxial CoSi2. Wires of constant dose but varying widths exhibit a transition in morphology from {111} faceted wires to largely (100) faceted layers. After annealing for prolonged periods, the finer wires show the effects of coarsening. We have also observed the movement of a significant amount of Co from the oxide implant mask into the substrate during these anneals. The wires show greatly improved thermal stability compared to polycrystalline suicides formed by deposition.1

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References

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