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Submicron Pattern Delineation Using a Pulsed Electron-Beam in Soft Vacuum

Published online by Cambridge University Press:  25 February 2011

Jayaraxn Krishnaswamy,
Lumin Li,
G. J. Collins and
H. Hiraoka
Jayaraxn Krishnaswamy
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
Lumin Li
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
G. J. Collins
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
H. Hiraoka
Affiliation:
IBM Research, Almaden Research Center, San Jose, CA 95120-6099
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Abstract

We describe herein an electron-beam, proximity lithograghic process which operates in soft vacuum (50 mT< p <1 Torr) using highly directed electron emission from a cold cathode. The electron-beam operates with large areas(<10 cm2) and with large total currents (Ipeak< 100A). Using this soft vacuum beam we could replicate feature sizes of ∼0.5 μm on∼3 μm thick PMMA, with a resist layer to stencil mask spacing of 25 to 30 μm. While resist exposed in a helium background showed vertical wall profiles (developed thickness ∼3 ¼m), resists exposed in air showed sloped walls (∼ 60°). Resist behavior also appears to be dependent on the number of pulses used for exposure ranging from simple exposure ( 1 to 5 pulses) to self-development ( >25 pulses).

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References

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