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The Subsurface Hydrogen Barrier Layer in Plasma-Treated Silicon

Published online by Cambridge University Press:  28 February 2011

A. E. Jaworowski,
L. S. Wielunski and
G. Bambakidis
A. E. Jaworowski
Affiliation:
Department of Physics, Wright State University, Dayton, Ohio 45435, USA
L. S. Wielunski
Affiliation:
Department of Physics, SUNY at Albany, Albany, New York 12222, USA
G. Bambakidis
Affiliation:
Department of Physics, Wright State University, Dayton, Ohio 45435, USA
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Abstract

The near-surface hydrogen profile was measured using the 15N hydrogen profiling technique in silicon. By depositing an adlayer of Al on the surface we were able to observe the separation of the near-surface hydrogen profile in silicon from the surface contamination layer. The hydrogen profiling of the near-surface region revealed the existence of a subsurface hydrogen layer which acts as a barrier to the transfer of hydrogen into the bulk. The observed subsurface layer is saturated with molecular hydrogen and its profile drops off sharply with increasing depth. The structure of this molecular hydrogen barrier and its thermal stability were studied.

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