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Super Poly-Si And Transistor Formed by Nickel-Induced-Lateral-Crystallization

Published online by Cambridge University Press:  17 March 2011

C.F. Cheng,
T.C. Leung and
M.C. Poon
C.F. Cheng
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
T.C. Leung
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M.C. Poon
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
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Abstract

Nickel-Induced-Lateral-Crystallization (NILC) was carried out on a 6000 Å amorphous Si (a-Si) layer. 6000 Å NILC poly-Si was formed and the upper 5000 Å Si layer was then removed. When compared to the conventional 1000 Å NILC poly-Si, the bottom 1000 Å NILC poly-Si layer was found to have relatively larger grains, less grain boundaries and better transistor mobility. The new high quality (super) NILC poly-Si layer can potentially provide greater contributions for novel device and circuit applications.

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References

REFERENCES

[1] Yoon, S.Y., Kim, K.H., Kim, C.O., Oh, J.Y., Jang, J., “Low temperature metal induced crystallization of amorphous silicon using a Ni solution,” J. Appl. Phys., vol. 82, no. 11, p. 5865–5867, 1997.Google Scholar
[2] Lee, K.H., Fang, Y.K. and Fan, S. H., “Au metal-induced lateral crystallization (MILC) of hydrogenated amorphous silicon thin film with very low annealing temperature and fast MILC rate,” Electronics Letters, vol. 35, no. 13, p.1108–1109, 1999.Google Scholar
[3] Lee, S.W., Jeon, Y.C., and Joo, S.K., “Pd induced lateral crystallization of amorphous Si thin films,” Appl. Phys. Lett., vol. 66, no. 13, p. 1671–1673, 1995.Google Scholar
[4] Jagar, S., Chan, M., Poon, M.C., Wang, H.M., Qin, M., Ko, P.K., Wang, Y.Y., “Single grain thin-film-transistor (TFT) with SOI CMOS performance formed by metal-induced-lateral crystallization,” 1999 International Electron Device Meeting (IEDM), p. 5–8, 1999.Google Scholar
[5] Wang, H.M., Chan, M., Jagar, S., Poon, M.C., Qin, M., Wang, Y. Y., Ko, P.K., “Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method,” IEEE Trans. Electron Device, 2000 Google Scholar
[6] Lam, L.K., Chan, S., and Ast, D.G., “Kinetics of nickel-induced lateral crystallization of amorphous silicon thin-film transistors by rapid thermal and furnace anneals,” Appl. Phys. Lett., vol. 74, pp. 1866–1868, Mar. 1999.Google Scholar