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Supersonic Jet Epitaxy: An Improved Method for Nitride Deposition

Published online by Cambridge University Press:  21 February 2011

Peter E. Norris,
Long D. Zhu,
H. Paul Maruska,
Wilson HO,
Scott Ustin and
L. Lauhon
Peter E. Norris
Affiliation:
NZ Applied Technologies. Woburn MA 01801
Long D. Zhu
Affiliation:
NZ Applied Technologies. Woburn MA 01801
H. Paul Maruska
Affiliation:
NZ Applied Technologies. Woburn MA 01801
Wilson HO
Affiliation:
Department of Physics, Cornell University, Ithaca, NY 14853
Scott Ustin
Affiliation:
Department of Physics, Cornell University, Ithaca, NY 14853
L. Lauhon
Affiliation:
Department of Physics, Cornell University, Ithaca, NY 14853
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Abstract

GaN was grown by supersonic jet epitaxy(SSJE), seeding triethylgallium in helium carrier gas. Activated nitrogen was supplied by a microwave plasma source. Single crystalline GaN films were deposited on the Si-face 6H-SiC and the c-plane sapphire substrates at 600–670°C. A cubic SiC buffer layer was grown onSi(111) at 800°C by SSJE using dichlorosilane, acetylene, and a high quality GaN crystal was grown on this template at 630°C. The materials high quality was proved by hard rectifying characteristics of a diode with an N-GaN/β-SiC/P-Si(111) structure.

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References

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