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Surface and Interface Modification of Copper for Electronic Application

Published online by Cambridge University Press:  25 February 2011

W. A. Lanford,
P. J. Ding,
S. Hymes and
S. P. Murarka
W. A. Lanford
Affiliation:
Department of Physics, University at Albany, Albany, NY 12222
P. J. Ding
Affiliation:
Department of Physics, University at Albany, Albany, NY 12222
S. Hymes
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Before copper will be used in the manufacture of microelectronic circuits, a number of its surface and interface properties have to be addressed. These include corrosion resistance, adhesion to dielectrics, and ability to block the transport of copper ions from the metal into adjacent materials. Different schemes have been explored to meet copper's material properties needed for electronic application. For surface modification, these include ion implantation, plasma treatments, formation of surface silicides, and annealing of copper films doped with other elements. For interface control, most schemes have involved deposition of an adhesion/barrier film. The present paper will discuss our present understanding of the mechanisms that govern surface and interface passivation. Special attention will be given to schemes that might lead to both surface and interface passivation in the same process.

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References

REFERENCES

1 See MRS Bulletin, June 1993.Google Scholar
2 Murarka, S. P., Proceedings of the Workshop on “Tungsten and Other Advanced Metals for ULSI Applications 1990” ed. by Smith, G. C. and Blumarthal, R. (MRS, Pittsburgh, PA, 1991) p. 179.Google Scholar
3 Uttecht, R. R. and Geffken, R., Proc. 8th VLSI Multilevel Interconnection Conf., IEEE Cat. #91TH0359-0, 20 (1991).Google Scholar
4 Ding, P. J., Lanford, W. A., Hymes, S. and Murarka, S. P., Applied Physics Letters 64, (1994) to be published.Google Scholar
5 Ding, P. J., Lanford, W. A., Hymes, S., and Murarka, S. P., Applied Physics Letters 75, 3627 (1994).Google Scholar
6 Ding, P. J., Wang, W., Lanford, W. A., Hymes, S. and Murarka, S. P., Journal of Applied Physics, submitted, 1994.Google Scholar
7 Wang, W., Ding, P. J., Lanford, W. A., Hymes, S. and Murarka, S. P., to be published.Google Scholar
8 Jian, Li and Mayer, J. W., MRS Bulletin, June 1993, 52.Google Scholar
9 Ding, P. J., Lanford, W. A., Hymes, S. and Murarka, S. P., Journal of Applied Physics 74, 1331 (1994).Google Scholar
10 Ding, P. J., Wang, W., Lanford, W. A., Hymes, S., and Murarka, S. P., Nuclear Instruments and Methods B85, 260 (1994).Google Scholar
11 Bardeen, J., Bratton, W. H. and Shockley, W., J. of Chemical Physics 14, 714 (1946).Google Scholar
12 Doolittle, L. and Thompson, M., RUMP RBS Simulation Program, Materials Science and Engineering Department, Bard Hall, Cornell University (1985). Available by Computer Graphic Service, LTD, RUMP Program, (1989).Google Scholar
13 “Binary Alloy Phase Diagrams”, 2nd Edition, ed. T. B. Massalski (ASM Int., Materials Park, OH, 1990) 1433.Google Scholar
14 Arcot, B.. Ph.D. Thesis, RPI, Troy, New York (1992).Google Scholar