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Surface Conversion Effects in Plasma-Damaged p-GaN

Published online by Cambridge University Press:  03 September 2012

X.A. Cao,
S.J. Pearton,
G.T. Dang,
A.P. Zhang,
F. Ren,
R.J. Shul,
L. Zhang,
R. Hickman and
J.M. Van Hove
X.A. Cao
Affiliation:
Dept. Materials Science and Engineering University of Florida, Gainesville, FL 32611
S.J. Pearton
Affiliation:
Dept. Materials Science and Engineering University of Florida, Gainesville, FL 32611
G.T. Dang
Affiliation:
Dept. Chemical Engineering University of Florida, Gainesville, FL 32611
A.P. Zhang
Affiliation:
Dept. Chemical Engineering University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Dept. Chemical Engineering University of Florida, Gainesville, FL 32611
R.J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
L. Zhang
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. Hickman
Affiliation:
SVT Associates, Eden Prairie, MN 55344
J.M. Van Hove
Affiliation:
SVT Associates, Eden Prairie, MN 55344
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Abstract

The near-surface (400-500Å) of p-GaN exposed to high density plasmas is found to become more compensated through the introduction of shallow donors. At high ion fluxes or ion energies there can be type-conversion of this surface region. Two different methods for removal of the damaged surface were investigated; wet etching in KOH, which produced self-limiting etch depths or thermal annealing under N2 which largely restored the initial electrical properties.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999, F99W10.8
Copyright
Copyright © Materials Research Society 1999

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