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Surface Electronic Structure of Nitric-oxide-treated Indium Tin Oxide

Published online by Cambridge University Press:  01 February 2011

Hu Jianqiao,
Pan Jisheng,
Furong Zhu and
Gong Hao
Hu Jianqiao
Affiliation:
Institute of Materials Research and Engineering, No. 3 Research Link Singapore, 117602
Pan Jisheng
Affiliation:
Institute of Materials Research and Engineering, No. 3 Research Link Singapore, 117602
Furong Zhu*
Affiliation:
Institute of Materials Research and Engineering, No. 3 Research Link Singapore, 117602
Gong Hao
Affiliation:
Department of Materials Science, National University of Singapore, Lower Kent Ridge, Singapore, 119260
*
*fr-zhu@imre.a-star.edu.sg
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Abstract

The surface electronic properties of the nitric oxide (NO) treated indium tin oxide (ITO) are examined in-situ by a four-point probe and X-ray photoelectron spectroscopy (XPS). The XPS N1s peak emerged at a high binding energy of 404 eV indicating that NO is reactive with ITO. NO adsorption induces an increase of film sheet resistance, arising from an oxygen rich layer near the ITO surface region, with approximately 2.5 nm thick. This implies that the interaction of NO with ITO is occurred around surface region. Valence band maximum measured for NO-absorbed ITO was shifted to the low binding energy side. This is related to the upward surface band bending.

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