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Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum Wells

Published online by Cambridge University Press:  01 February 2011

Xiyao Zhang,
Ian Patrick Wellenius,
Ailing Cai,
John Muth,
John Roberts,
Pradeep Rajagopal,
Jim Cook,
Eddie Piner and
Kevin Linthicum
Xiyao Zhang
Affiliation:
xzhang11@ncsu.edu
Ian Patrick Wellenius
Affiliation:
pwellen@ncsu.edu
Ailing Cai
Affiliation:
acai@unity.ncsu.edu
John Muth
Affiliation:
muth@unity.ncsu.edu, United States
John Roberts
Affiliation:
jroberts@nitronex.com
Pradeep Rajagopal
Affiliation:
Pradeep@nitronex.com
Jim Cook
Affiliation:
jcook@nitronex.com
Eddie Piner
Affiliation:
epiner@nitronex.com
Kevin Linthicum
Affiliation:
kLinthicum@nitronex.com
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Abstract

Surface quantum wells of gallium nitride have been grown by Metal Organic Vapor Phase Epitaxy on top of AlGaN/GaN heterostructures. One boundary of the quantum well is vacuum (or air)/GaN interface, the other is GaN/AlGaN interface, and the width of the quantum well is the thickness of gallium nitride cap, and quantum confinement is demonstrate by the energy shift in photoluminescence, and cathodoluminescence as the GaN cap thickness is varied. The efficiency of the quantum well emission is sensitive to the surface environment and resulting surface recombination velocity. In this study the surface is altered by surface preparation treatments and resulting in changes in the luminescence. The changes in the efficiency of quantum well luminescence with surface treatments are attributed to changes in surface recombination velocity and surface electric fields.

Keywords

surface chemistryIII-Vepitaxy

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005, 0892-FF23-06
Copyright
Copyright © Materials Research Society 2006

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References

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