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Swift Heavy Ion Beam-Based Nanopatterning Using Self-Assembled Masks

Published online by Cambridge University Press:  01 February 2011

Jens Jensen
Affiliation:
jens.jensen@angstrom.uu.se, Uppsala University, Department of Engineering Sciences, The Ångström Laboratory, Box 534, Uppsala, SE-751 21, Sweden, 0046 18 55 5736
Ruy Sanz
Affiliation:
ruy@icmm.csic.es, Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Madrid, Madrid, 28049, Spain
Marek Skupinski
Affiliation:
marek.skupinski@hotmail.com, Uppsala University, Department of Engineering Sciences, The Ångström Laboratory, Box 534, Uppsala, SE-751 21, Sweden
Manuel Hernandez-Vélez
Affiliation:
manuel.hernandez@uam.es, Universidad Autonoma de Madrid, Departamento de Fisica Aplicada, Madrid, 28049, Spain
Göran Possnert
Affiliation:
Goran.Possnert@angstrom.uu.se, Uppsala University, Department of Engineering Sciences, The Ångström Laboratory, Box 534, Uppsala, SE-751 21, Sweden
Klas Hjort
Affiliation:
Klas.Hjort@angstrom.uu.se, Uppsala University, Department of Engineering Sciences, The Ångström Laboratory, Box 534, Uppsala, SE-751 21, Sweden
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Abstract

Swift heavy ion beam-based lithography using masks of self-assembled materials has been applied for transferring well-ordered micro- and nanopatterns to rutile TiO2 single crystals. As the induced damage has a high etching selectivity the patterns can be developed in HF with very high contrast. Here we present resulting patterns when using a mask of self-ordered silica spheres. Since the obtained structures are replicas of the mass distribution of the applied mask, the shape and size of resulting structures depend on the geometric configuration of the silica sphere layers. In addition, the resulting pattern can be tuned by varying the applied ion energy and fluence. Direct modifications of the optical properties of TiO2 in a well-defined pattern are also presented.

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Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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