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Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing*

Published online by Cambridge University Press:  15 February 2011

B. C. Larson,
C. W. White,
T. S. Noggle,
J. F. Barhorst and
D. Mills
B. C. Larson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
T. S. Noggle
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. F. Barhorst
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
D. Mills
Affiliation:
Cornell High Energy Sychrotron Source and School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14850
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Abstract

Synchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

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