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A Systematic Study of Metal-assisted Chemical Etching Parameters for Well-Ordered Silicon Nanowire Array Fabrication

Published online by Cambridge University Press:  07 February 2012

Arif S. Alagoz and
Tansel Karabacak
Arif S. Alagoz
Affiliation:
Department of Applied Science, University of Arkansas at Little Rock, Little Rock, AR 72204, USA
Tansel Karabacak
Affiliation:
Department of Applied Science, University of Arkansas at Little Rock, Little Rock, AR 72204, USA
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Abstract

Metal-assisted chemical etching is a simple and low-cost silicon nanowire fabrication method which allows control of nanowire diameter, length, shape and orientation. In this work, we fabricated well-ordered silicon nanowire array by patterning gold thin film by nanosphere lithography and etching single crystalline silicon wafer by metal-assisted chemical etching technique. We investigated relation between etched solution concentration and nanowire morphology, wafer crystal orientation, etching rate. This well-ordered silicon nanowires arrays have the potential applications in many fields but especially next generation energy related applications from solar cells to lithium-ion batteries.

Keywords

Sinanoscalecrystal

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1408: Symposium BB – Functional Nanowires and Nanotubes , 2012, mrsf11-1408-bb20-47
Copyright
Copyright © Materials Research Society 2012

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References

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