Hostname: page-component-7b7567c8c-mnklg Total loading time: 0 Render date: 2026-11-12T19:59:38.426Z Has data issue: false hasContentIssue false
  • English
  • Français

Tailored Si-Layers on Silicon Oxide Obtained by Thermal CVD

Published online by Cambridge University Press:  10 February 2011

G. Beaucarne,
J. Poortmans,
M. Caymax,
J. Nijs and
R. Mertens
G. Beaucarne
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, beaucarn@imec.be
J. Poortmans
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, beaucarn@imec.be
M. Caymax
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, beaucarn@imec.be
J. Nijs
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, beaucarn@imec.be
R. Mertens
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, beaucarn@imec.be
Get access

Abstract

In this paper, a method to obtain by CVD Si layers on silicon oxide with the desired grain size is described, involving nucleation control through the growth parameters. Nucleation experiments are carried out with a hydrogen - dichlorosilane - HCl ambient at high temperature. The nucleus density is observed to drop to low values at a threshold HCl-flow. A qualitative explanation using concepts from atomistic nucleation theory is proposed. The effect of addition of diborane to the gas flow is investigated and appears to be small or non-existent . Finally, preliminary results of a thin-film crystalline silicon solar cell process applied on such layers are given to illustrate the potential of such layers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997, 89
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Fischer, D., Keppner, H., Kroll, U., Torres, P., Meier, J., Platz, R., Dubail, S., Selvan, J. A. Anna, Vaucher, N. Pellaton, Ziegler, Y., Tscharner, R., Hof, Ch., Beck, N., Goetz, M., Pernet, P., Goerlitzer, M., Wyrsch, N., Vuille, J., Cuperus, J., Shah, A., 14th EPVSC, Barcelona, Spain, 1997 Google Scholar
2. Baba, T., Shima, M., Matsuyama, T., Tsuge, S., Wakisaka, K., Tsuda, S., 13th EPVSC, Nice, France, 1995 Google Scholar
3. Takami, A., Arimoto, S., Morikawa, H., Hamamoto, S., Ishihara, T., Kumabe, H., Murotani, T., 12th EPVSC, Amsterdam, 1994 Google Scholar
4. Hebling, C., Glunz, S. W., Schetter, C., Knobloch, J., 14th EPVSC, Barcelona, Spain, 1997 Google Scholar
5. Bai, Y., Ford, D. H., Rand, J. A., Barnett, A. M., 26th IEEE PVSC, Anaheim, CA, 1997 Google Scholar
6. Green, M. A., Zhao, J., 14th EPVSC, Barcelona, Spain, 1997 Google Scholar
7. Yoshimi, M., Suzuki, T., Nakajima, A., Yamamoto, K., 26th IEEE PVSC, Anaheim, CA, 1997 Google Scholar
8. Borland, J. O., Drowley, C. I., Solid State Technology, August 1985, 141 Google Scholar
9. Claassen, W. A. P., Bloem, J., J. Electrochem. Soc., Vol. 127, No 1, 194 (1980)Google Scholar
10. Venables, J.A., Philos. Mag., 27, 697 (1973)Google Scholar
11. Mutaftschiev, B., Nucleation Theory, in Handbook of Crystal Growth, Vol.1, A, (Elsevier Science B.V., Amsterdam, 1994), p. 192 Google Scholar
12. Hebling, C., Gaffke, R., Sterk, S., Warta, W., 13th EPVSC, Nice, France, 1995 Google Scholar