Hostname: page-component-7b7567c8c-2n9c9 Total loading time: 0 Render date: 2026-11-13T12:59:50.013Z Has data issue: false hasContentIssue false
  • English
  • Français

TCAD Modeling of Strain-Engineered MOSFETs

Published online by Cambridge University Press:  01 February 2011

Lee Smith
Lee Smith*
Affiliation:
lee.smith@synopsys.com, Synopsys, Inc., TCAD, 700 E. Middlefield Road, Mailstop A14, Mountain View, CA, 94043, United States
Get access

Abstract

The rapid rise of standby power in nanoscale MOSFETs is slowing classical scaling and threatening to derail continued improvements in MOSFET performance. Strain-enhancement of carrier transport in the MOSFET channel has emerged as a particularly effective approach to enable significant performance improvements at similar off-state leakage. In this paper we describe how strain effects are modeled within the context of TCAD process and device simulation. We also use TCAD simulations to review some of the common approaches to engineer strain in MOSFETs and to explain how strain impacts device and circuit characteristics.

Keywords

semiconductingdevicessimulation

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Thompson, S. E., Armstrong, M., Auth, C., Cea, S., Chau, R., Glass, G., Hoffman, T., Klaus, J., Ma, Z., Mcintyre, B., Murthy, A., Obradovic, B., Shifren, L., Sivakumar, S., Tyagi, S., Ghani, T., Mistry, K., Bohr, M. and El-Mansy, Y., IEEE Electron Device Lett. 25, 191 (2004).Google Scholar
2 Rim, K., Chu, J., Chen, J.H., Jenkins, K.A., Kanarsky, T., Lee, K., Mocuta, A., Zhu, H., Roy, R., Newbury, J., Ott, J., Petrarca, K., Mooney, P., Lacey, D., Koester, S., Chan, K., Boyd, D., Ieong, M., Wong, H.-S., Symposium on VLSI Technology, Digest of Technical Papers 2002, 98 (2002).Google Scholar
3 Nouri, F., Verheyen, P., Washington, L., Moroz, V., Wolf, I. De, Kawaguchi, M., Biesemans, S., Schreutelkamp, R., Kim, Y., Shen, M., Xu, X., Rooyackers, R., Jurczak, M., Eneman, G., Meyer, K. De, Smith, L., Pramanik, D., Forstner, H., Thirupapuliyur, S. and Higashi, G. S., IEDM Tech. Dig. 2004, 1055 (2004).Google Scholar
4 Welser, J., Hoyt, J.L. and Gibbons, J.F., IEEE Electron Device Lett. 15, 100 (1994).Google Scholar
5 Uchida, K., Krishnamohan, T., Saraswat, K.C. and Nishi, Y., IEDM Tech. Dig. 2005, 129 (2005).Google Scholar
6 Manku, T. and Nathan, A., J. Appl. Phys. 73, 1205 (1993).Google Scholar
7 Obradovic, B., Matagne, P., Shifren, L., Wang, X., Stettler, M., He, J. and Giles, M. D., IWCE Tech. Dig., 26 (2004).Google Scholar
8 Smith, L., Moroz, V., Eneman, G., Verheyen, P., Nouri, F., Washington, L., Jurczak, M., Penzin, O., Pramanik, D. and Meyer, K. De, IEEE Electron Device Lett. 26, 652 (2005).Google Scholar
9 Washington, L., Nouri, F., Thirupapuliyur, S., Eneman, G., Verheyen, P., Moroz, V., Smith, L., Xu, X., Kawaguchi, M., Huang, T., Ahmed, K., Balseanu, M., Xia, L., Shen, M., Kim, Y., Rooyackers, R., Meyer, K. De and Schreutelkamp, R., IEEE Electron Device Lett., accepted for publication (2006).Google Scholar
10 Moroz, V., Strecker, N., Xu, X., Smith, L. and Bork, I., Material Science in Semiconductor Processing 6, 27 (2003).Google Scholar
11 Smith, C. S., Phys. Rev. 94, 42 (1954).Google Scholar
12 Wang, E., Matagne, P., Shifren, L., Obradovic, B., Kotlyar, R., Cea, S., He, J., Ma, Z., Nagisetty, R., Tyagi, S., Stettler, M. and Giles, M. D., IEDM Tech. Dig. 2004, 147 (2004).Google Scholar
13 Takagi, S., Toriumi, A., Iwase, M. and Tango, H., IEEE Trans. on Electron Devices 41, 2357 (1994).Google Scholar
14 Rodriguez, S., Lopez-Villanueva, J. A., Melchor, I. and Carceller, J. E., J. Appl. Phys. 86, 438 (1999).Google Scholar
15 Lochtefeld, A. and Antoniadis, D., IEEE Electron Device Lett. 22, 591 (2001).Google Scholar
16 Moroz, V., Eneman, G., Verheyen, P., Nouri, F., Washington, L., Smith, L., Jurczak, M., Pramanik, D. and Xu, X., International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD) 2005, 143 (2005).Google Scholar