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Temperature Dependence of Metastable Defect Creation in a-SiNx:H

Published online by Cambridge University Press:  21 February 2011

A. Hamed,
H. Fritzsche and
S. Köhler
A. Hamed
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, U.S.A.
H. Fritzsche
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, U.S.A.
S. Köhler
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, U.S.A.
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Abstract

Light exposure of multilayers consisting of alternating 2.5 nm thick a-Si:H and about 40 nm thick a-SiNx:H produces a large metastable excess dark conductance. This appears to be due to metastable defects in a-SiNx:H produced by hopping injection of photocarriers from the a-Si:H. They anneal at an equilibration temperature TE∼460°K. These metastable defects are created with the same efficiency between 4K and 300K. The efficiency rapidly falls above 350K. The metastable defects have the same anneal temperature regardless of creation temperature. The mechanism of defect creation will be compared with that in a-Si:H.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991, 51
Copyright
Copyright © Materials Research Society 1991

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References

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