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Ternary Group-III-Nitrides Grown in Movpe Production Reactors

Published online by Cambridge University Press:  10 February 2011

O. Schoen,
H. Protzmann,
M. Schwambera,
B. Schineller,
M. Heuken,
D. Schmitz,
G. Strauch and
H. Juergensen
O. Schoen
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, Germany Tel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: mail@aixtron.com
H. Protzmann
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, Germany Tel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: mail@aixtron.com
M. Schwambera
Affiliation:
Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, D-52056 Aachen Tel: +49 (241) 80 77 45, Fax: +49 (241) 80 88 199; e-mail: mailbox@iht.rwth-aachen.de
B. Schineller
Affiliation:
Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, D-52056 Aachen Tel: +49 (241) 80 77 45, Fax: +49 (241) 80 88 199; e-mail: mailbox@iht.rwth-aachen.de
M. Heuken
Affiliation:
Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, D-52056 Aachen Tel: +49 (241) 80 77 45, Fax: +49 (241) 80 88 199; e-mail: mailbox@iht.rwth-aachen.de
D. Schmitz
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, Germany Tel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: mail@aixtron.com
G. Strauch
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, Germany Tel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: mail@aixtron.com
H. Juergensen
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, Germany Tel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: mail@aixtron.com
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Abstract

Using production scale AIXTRON MOCVD systems various heterointerfaces in the GaInN/GaN system have been studied in depth. GaInN single hetero layers were investigated to optimise photoluminescence properties. Several approaches of capping GaInN/GaN with another GaN layer to develop high quality double-hetero (DH) structures were presented. Using an optimised interfacing technique we obtain device quality DH structures with state of the art composition uniformity across a 2 inch wafer

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References

1. Dauelsberg, M., Kadinski, L., Makarov, Yu. N., Woelk, E., Strauch, G., Schmitz, D., Juergensen, H., Inst. Phys. Ser. No. 142: Chapter 12 (1996) 887–890 Google Scholar
2. Schulte, F., Strauch, G., Juergensen, H., Niemann, E., Leidich, D., Transactions 2nd Int. High Temp. Elec. Conf., Charlotte, June 1994, Vol. 1 (1994) X–3 Google Scholar
3. Eichel-Streiber, C. v., Schoen, O., Beccard, R., Schmitz, D., Heuken, M., Juergensen, H., to be published in J. of Cryst. Growth, Special Issue ICNS '97Google Scholar
4. Beccard, R., Schoen, O., Wachtendorf, B., Schmitz, D., Juergensen, H., Woelk, E., to be published in J. of Elec. Mats., Special Edition OMVPE Dana Point, Apr. 13.-17. '97Google Scholar