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A Test of Two Solute-Trapping Models*

Published online by Cambridge University Press:  25 February 2011

M. J. Aziz,
J. Y. Tsao,
M. O. Thompson,
P. S. Peercy,
C. W. White and
W. H. Christie
M. J. Aziz
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831.
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
M. O. Thompson
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853.
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831.
W. H. Christie
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853.
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Abstract

Two solute trapping models are compared. They are shown to predict identicalbehavior at any given end of a phase diagram but different behavior as thephase diagram is traversed. The segregation behavior of dilute solutions ofGe in Si (ke < 1) and of Si in Ge (ke > 1) during regrowth frompulsed-laser melting is being studied using transient conductance, highresolution RBS, and SIMS. Our results to date suggest a significant amount"of solute trapping (k —> 1) of Ge in Si and of Si in Ge. Such a resultwould be inconsistent with the predictions of one of the models.

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S.Department of Energy under contract DE-AC05-840R21400 with MartinMarietta Energy Systems, Inc.

References

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