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Theoretical and Experimental Description of Interface Structure

Published online by Cambridge University Press:  26 February 2011

R. Hull,
K. W. Carey and
G. A. Reid
R. Hull
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Rd., Palo Alto, CA 94304
K. W. Carey
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Rd., Palo Alto, CA 94304
G. A. Reid
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Rd., Palo Alto, CA 94304
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Abstract

We define the Interface between two dissimilar materials by two functions, g(z) and f(x,y), representing the diffuseness along the interface normal and the distribution of interface non-planarities respectively. We show how these functions may be measured for the case of epitaxial interfaces between dissimilar crystals by quantitative analysis of lattice structure images obtained by high resolution transmission electron microscopy. Experimental examples are drawn from the GeSi/Si, InGaAs/InAlAs and InGaAs/InP systems. Correlations between interface structure and optical and electronic properties of these systems are discussed.

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References

REFERENCES

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[5] Hull, R., Carey, K.W., Fouquet, J.E., Reid, G.A., Bimberg, D. and Oertel, D., to be published in Proceedings of the 13th International Symposium on GaAs and Related Compounds, Las Vegas, NV, Sep. 1986 Google Scholar
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