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Thermal Donor Formation by the Agglomeration of Oxygen in Silicon

Published online by Cambridge University Press:  15 February 2011

U. GÖsele and
T. Y. Tan
U. GÖsele
Affiliation:
Max-Planck-Institut für Metallforschung, Stuttgart, Fed. Rep. Germany
T. Y. Tan
Affiliation:
IBM Th. J. Watson Research Center, Yorktown Heights, N. Y. 10598, USA
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Abstract

We suggest that thermal donor formation in silicon involves fast-diffusing, gas-like molecular oxygen in dynamical equilibrium with atomic oxygen in interstitial position. We will discuss still remaining difficulties in understanding thermal donor formation in the light of recent experimental observations by Stavola, Patel, Kimerling and Treeland, indicating that the diffusivity of interstitial oxygen apparently depends on the thermal history of the silicon sample.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982, 153
Copyright
Copyright © Materials Research Society 1982

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References

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