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A Thermal Equilibrium Model for the Dopant and Defect Structure in a-Si:H

Published online by Cambridge University Press:  26 February 2011

Gerhard Müller
Gerhard Müller*
Affiliation:
Messerschmitt-Bölkow-Blohm GmbH, Postfach 80 11 09, 8000 München 80, Fed. Rep. of Germany.
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Abstract

Our previous thermal equilibrium approach, based on the assumption of an intrinsic relaxation mechanism, has been evaluated on a quantitative scale. The predictions of this model are compared to experimental defect density data and a microscopic description of the thermalization process is presen-ted.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988, 285
Copyright
Copyright © Materials Research Society 1988

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References

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