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Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling

Published online by Cambridge University Press:  01 February 2011

Fuccio Cristiano,
Benjamin Colombeau,
Bernadette de Mauduit,
Caroline Bonafos,
Gerard Benassayag and
Alain Claverie
Fuccio Cristiano
Affiliation:
Ion Implantation Group CEMES-LAAS/CNRS Toulouse – CEMES/CNRS, 29, rue J.Marvig, 31055 Toulouse, France – LAAS/CNRS, 7 Ave. Colonel Roche, 31077 Toulouse, France
Benjamin Colombeau
Affiliation:
Current address: School of Electronics, Computing and Mathematics, Univ. of Surrey, UK
Bernadette de Mauduit
Affiliation:
Ion Implantation Group CEMES-LAAS/CNRS Toulouse – CEMES/CNRS, 29, rue J.Marvig, 31055 Toulouse, France – LAAS/CNRS, 7 Ave. Colonel Roche, 31077 Toulouse, France
Caroline Bonafos
Affiliation:
Ion Implantation Group CEMES-LAAS/CNRS Toulouse – CEMES/CNRS, 29, rue J.Marvig, 31055 Toulouse, France – LAAS/CNRS, 7 Ave. Colonel Roche, 31077 Toulouse, France
Gerard Benassayag
Affiliation:
Ion Implantation Group CEMES-LAAS/CNRS Toulouse – CEMES/CNRS, 29, rue J.Marvig, 31055 Toulouse, France – LAAS/CNRS, 7 Ave. Colonel Roche, 31077 Toulouse, France
Alain Claverie
Affiliation:
Ion Implantation Group CEMES-LAAS/CNRS Toulouse – CEMES/CNRS, 29, rue J.Marvig, 31055 Toulouse, France – LAAS/CNRS, 7 Ave. Colonel Roche, 31077 Toulouse, France
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Abstract

We present an extensive study of the thermal evolution of the extended defects found in ion implanted Si as a function of annealing conditions. We will first review their structure and energetics and show that the defect kinetics can be described by an Ostwald ripening process whereby the defects exchange Si atoms and evolve in size and type to minimise their formation energy. Finally, we will present a physically based model to predict the evolution of extrinsic defects during annealing through the calculation of defect densities, size distributions, number of clustered interstitials and free-interstitial supersaturation. We will show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantation energies.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002, C5.7
Copyright
Copyright © Materials Research Society 2002

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