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Thermal Stability Study of Oxygen Implanted Algaas/Gaas Single Quantum Well Structures Using PhotoreflectancE

Published online by Cambridge University Press:  21 February 2011

P J Hughes,
E H Li,
B L Weiss,
H E Jackson and
J S Roberts
P J Hughes
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, SURREY GU2 5XH, UK
E H Li
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, SURREY GU2 5XH, UK
B L Weiss
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, SURREY GU2 5XH, UK
H E Jackson
Affiliation:
Department of Physics, University of Cincinnati Cincinnati, OHIO, 45220-0011, USA
J S Roberts
Affiliation:
Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield, SI 3JD, UK
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Abstract

The effects of interdiffusion on the band structure of two MxGaUxAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm”2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.

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References

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