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Thin Oxide Defects Resulting from Plasma Induced Wafer Charging

Published online by Cambridge University Press:  03 September 2012

Sychyi Fang and
James P. McVittie
Sychyi Fang
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305–4070
James P. McVittie
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305–4070
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Abstract

EEPROM charge monitors reveal that an O2 plasma induces a negative charge which peaks at the wafer center for the asher used. The charge damage to small gate area MOS capacitors is investigated by using “antenna” structure. The post plasma interface state density increases with increasing antenna size and varies by two orders of magnitude. A hole trapping induced breakdown mechanism during plasma charging is supported by new experimental evidence such as the annealing and polarity effects of charge-to-breakdown and tunneling currents. Where stressing has not being severe, these hole traps are annealable at T > 650°C, while in severely stressed areas early breakdown occurs which is not annealable.

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References

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