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Three-Dimensional Organic Field-Effect Transistors: Charge Accumulation in their Vertical Semiconductor Channels

Published online by Cambridge University Press:  31 January 2011

M. Uno,
I. Doi,
K. Takimiya and
Jun Takeya
M. Uno
Affiliation:
uno@tri.pref.osaka.jp, TRI-Osaka, Izumi, Japan
I. Doi
Affiliation:
doi@hiroshima-u.ac.jp, Hiroshima University, Graduate School of Applied Chemistry, Higashi-Hiroshima, Japan
K. Takimiya
Affiliation:
ktakimi@hiroshima-u.ac.jp, Hiroshima University, Graduate School of Applied Chemistry, Higashi-hiroshima, Japan
Jun Takeya
Affiliation:
takeya@chem.sci.osaka-u.ac.jp, Osaka University, Dept. of Chemistry, Grad. School of Science, 1-1 Machikaneyama, Toyonaka, 560-0043, Japan, +81-6-6850-5398, +81-6-6850-6797
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Abstract

Three-dimensional organic field-effect transistors are developed with multiple vertical channels of organic semiconductors to gain high output current and high on-off ratio. High-mobility and air-stable dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene thin films deposited on horizontally elongated vertical sidewalls have realized unprecedented high output current per area of 2.6 A/cm2 with the application of drain voltage -10 V and gate voltage -20 V. The on-off ratio is as high as 2.7×106. Carrier mobility of the organic semiconductor deposited on the vertical sidewalls is typically 0.30 cm2/Vs. The structure is built also on plastic substrates, where still considerable current modulation is preserved with high output current per area of 70 mA/cm2 and with high on-off ratio of 8.7×106. The performance exceeds practical requirements for applications in driving organic light-emitting diodes in active-matrix displays. The technique of gating with electric double layers of ionic liquid is also introduced to the three-dimensional transistor structure.

Keywords

organicsemiconductingelectronic material

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1154: Symposium B – Concepts in Molecular and Organic Electronics , 2009, 1154-B10-55
Copyright
Copyright © Materials Research Society 2009

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