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THz Emission from InN

Published online by Cambridge University Press:  31 January 2011

Hyeyoung Ahn,
Yi-Jou Yeh,
Yu-Liang Hong and
Shangjr Gwo
Hyeyoung Ahn
Affiliation:
hyahn@mail.nctu.edu.tw, National Chiao Tung University, Department of Photonics, Hsinchu, Taiwan, Province of China
Yi-Jou Yeh
Affiliation:
eviayeh@am94.nctu.edu.tw, National Chiao Tung University, Department of Photonics, Hsinchu, Taiwan, Province of China
Yu-Liang Hong
Affiliation:
d9622806@oz.nthu.edu.tw, National Tsing Hua University, Department of Physics, Hsinchu, Taiwan, Province of China
Shangjr Gwo
Affiliation:
shangjr.gwo@scholarone.com, National Tsing Hua University, Department of Physics, Hsinchu, Taiwan, Province of China
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Abstract

We report the terahertz (THz) emission from the wurzite indium nitride (InN) films grown by molecular beam epitaxy (MBE). More than two orders of magnitude of THz power enhancement has been achieved from the InN film grown along the a-axis and magnesium (Mg) doped InN with a critical carrier concentration. The primary radiation mechanism of the a-plane InN film is found to be due to the acceleration of photoexcited carriers under the polarization-induced in-plane electric field perpendicular to the a-axis. Apparent azimuthal angle dependences of THz wave amplitude and the second harmonic generation are observed from a-plane InN. In the Mg-doped films, Mg as the acceptors compensate the native donors in the InN films and large band bending over a wider space-charge region causes the enhancement of THz emission power compared to the undoped InN.

Keywords

III-VHall effectMg

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References

1 Acsazubi, R., Wilke, I., Denniston, K., Lu, H. L., and Schaff, W. J., Appl. Phys. Lett. 84, 4810 (2004).Google Scholar
2 Pradarutti, B., Matthäus, G., Brückner, C., Riehemann, S., Notni, G., Nolti, S., Cimalla, V., Lebedev, V., Ambacher, O., and Tünnermann, A., Proc. of SPIE vol. 6194, 619401 (2006).Google Scholar
3 Cimalla, V., Pradarutti, B., Matthäus, G., Brückner, C., Riehemann, S., Notni, G., Nolte, S., Tünnermann, A., Lebedev, V., and Ambacher, O., Phys. Stat. Sol. B 244, 1829 (2007).Google Scholar
4 Chern, G. D., Readinger, E. D., Shen, H., Wraback, M., Gallinat, C. S., Koblmuller, G., and Speck, J. S., Appl. Phys. Lett. 89, 141115 (2006).Google Scholar
5 Ahn, H., Ku, Y.-P., Wang, Y.-C., Chuang, C.-H., Gwo, S., and Pan, Ci-Ling, Appl. Phys. Lett. 91, 132108 (2007).Google Scholar
6 Jones, R. E., Yu, K. M., Li, S. X., Walukiewicz, W., Ager, J. W., Haller, E. E., Lu, H., and Schaff, W. J., Phys. Rev. Lett. 96, 125505 (2006).Google Scholar
7 Ahn, H., Ku, Y.-P., Wang, Y.-C., Chuang, C.-H., Gwo, S., and Pan, C.L., Appl. Phys, Lett. 91, 163105 (2007).Google Scholar
8 Ahn, H., Chuang, C.-H., Ku, Y.-P., and Pan, C.-L., J. Appl. Phys. 105, 023707 (2009).Google Scholar
9 Wilke, I., Ascazubi, R., Lu, H., and Schaff, W. J., Appl. Phys. Lett. 93, 221113 (2008).Google Scholar
10 Fujiwara, M., Ishitani, Y., Wang, X., Che, S.-B., and Yoshikawa, A., Appl. Phys. Lett. 93, 231903 (2008).10.1063/1.3006052Google Scholar
11 Ahn, H., Pan, C.-L., and Gwo, S., Proc. of SPIE, 7216, 72160T (2009).Google Scholar
12 Lin, K. I., 1, Tsai, J. T., Wang, T. S., Hwang, J. S., Chen, M. C., and Chi, G. C., Appl. Phys. Lett. 93, 262102 (2008).10.1063/1.3056635Google Scholar
13 Johnston, M. B., Whittaker, D. M., Corchia, A., Davies, A. G., and Linfield, E. H., Phys. Rev. B 65, 165301 (2002).Google Scholar
14 Johnston, M. B., Whittaker, D. M., Dowd, A., Davies, A. G., Linfield, E. H., Li, X., and Ritchie, D. A., Opt. Lett. 27, 1935 (2002).Google Scholar
15 Estacio, E., Sumikura, H., Murakami, H., Tani, M., Sarukura, N., and Hangyo, M., Apply. Phys. Lett. 90, 151915 (2007).Google Scholar
16 Chang, Y. M., Hong, Y.-L., and Gwo, S., Appl. Phys. Lett. 93, 131106 (2008).Google Scholar
17 Reid, M., Cravetchi, I. V., Fedosejevs, R., Phys. Rev. B 72, 035201 (2005).Google Scholar
18 Ascazubi, R., Shneider, C., Wilke, I., Pino, R., and Dutta, P. S., Phys. Rev. B 72, 045328 (2005).Google Scholar
19 Ahn, H., Shen, C.-H., Wu, C.-L., and Gwo, S., Appl. Phys. Lett. 86, 201905 (2005).Google Scholar