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Titanium Silicidation by Halogen Lamp Annealing

Published online by Cambridge University Press:  25 February 2011

T. Okamoto,
M. Shimizu,
K. Tsukamoto and
T. Matsukawa
T. Okamoto
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp. Mizuhara, Itami, Hyogo, 664, JAPAN
M. Shimizu
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp. Mizuhara, Itami, Hyogo, 664, JAPAN
K. Tsukamoto
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp. Mizuhara, Itami, Hyogo, 664, JAPAN
T. Matsukawa
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp. Mizuhara, Itami, Hyogo, 664, JAPAN
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Abstract

Silicidation of titanium on silicon is carried out with the halogen lampannealing. It is found that the lamp annealing is quite effective in formingan oxide-free and homogeneous titanium disilicide layer with resistivity of15–17 μohm·cm. Rutherford backscatterring and X-ray diffraction studies showthat the halogen lamp annealing over 650 °C for only 60 sec results indisilicide. By a silicidation reaction, arsenic and boron atoms at siliconbeneath a titanium layer are incorporated into a formed silicide layer.Arsenic atoms initially in a titanium layer are swept toward the surface assilicidation reaction proceeds. Arsenic atoms in titanium have an effect toretard silicidation reaction.

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References

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