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Topological Signatures of Medium Range Order in Amorphous Semiconductor Models

Published online by Cambridge University Press:  17 March 2011

M. M. J. Treacy,
P. M. Voyles and
J. M. Gibson
M. M. J. Treacy
Affiliation:
NEC Research Institute, Inc. 4 Independence Way, Princeton, NJ 08540
P. M. Voyles
Affiliation:
NEC Research Institute, Inc. 4 Independence Way, Princeton, NJ 08540Dept. of Physics, University of Illinois, 1110 W. Green St., Urbana, IL 61801
J. M. Gibson
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 Cass Ave., Argonne, IL 6043
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Abstract

The topological local cluster (or Schläfli cluster) concept of Marians and Hobbs is used to detect topologically crystalline regions in models of disordered tetrahedral semiconductors. We present simple algorithms for detecting both Wells-type shortest circuits and O'Keeffe-type rings, which can be used to delineate alternative forms of the Schläfli cluster in models.

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References

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