Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-15T00:45:26.044Z Has data issue: false hasContentIssue false
  • English
  • Français

Towards the Realization of a INP/CDS/LAS Cold Cathode

Published online by Cambridge University Press:  10 February 2011

M. Cahay,
A. Malhotra,
Y. Modukuru,
H. Tang,
W. Bresser,
P. Boolchand,
P. Mumford and
W. Friz
M. Cahay
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
A. Malhotra
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
Y. Modukuru
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
H. Tang
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
W. Bresser
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
P. Boolchand
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
P. Mumford
Affiliation:
Air Force Research Laboratory, Sensors Directorate, WPAFB, Dayton, Ohio 45433
W. Friz
Affiliation:
Multi Area Research in Science (MARS) Consultants, Fairborn, Ohio 45324
Get access

Abstract

In the past, we have proposed a new cold cathode emitter which consists of a thin region of CdS (Cadmium Sulfide) sandwiched between a heavily doped InP (Indium Phosphide) substrate and a low work function LaS (Lanthanum Sulfide) semimetallic thin film. In this paper, we briefly review the principle of operation of the cathode and discuss the preliminary experimental steps undertaken to realize prototypes of the device. More specifically, we describe the growth of bulk samples of LaS which is used to achieve Negative Electron Affinity of the CdS/LaS surface. X-ray diffraction and micro-Raman experiments show the successful growth of the fcc cubic phase of LaS samples.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Bell, P. R., Negative Electron Affinity Devices, Oxford: Claredon Press, 1973 Google Scholar
[2] Brodie, I. and Spindt, C. A., Advances in Electronics and Electron Physics 83, 2 (1992).Google Scholar
[3] Mumford, P. D. and Cahay, M., Journal of Applied Physics 79, 2176 (1996).Google Scholar
[4] Mumford, P. D. and Cahay, M., Journal of Applied Physics 81, 3707 (1997).Google Scholar
[5] Mumford, P. D. and Cahay, M., Journal of Applied Physics 84, 2457 (1998).Google Scholar
[6] Malhotra, A., Modukuru, Y. and Cahay, M., Journal of Vacuum Science and Technology 16, 3086 (1998).Google Scholar
[7] Wilke, W. G., Seedorf, R., and Horn, K., J. Vac. Sci. Technology. B 7, 807 (1989).Google Scholar
[8] Lincot, D., Ortega-Borges, R., and Froment, M., Appl. Phys. Letters 64, 569 (1994).Google Scholar
[9] Shen, W. P. and Kwok, H. S., Appl. Phys. Letters 65, 2162 (1994).Google Scholar
[10] Golubkov, A. V., Zhukova, T. B., and Sergeeva, V. M., Neorganicheskie Materialy 2, 77 (1966).Google Scholar
[11] Fomenko, S. in Handbook of Thermionic properties (Plenum, New York, 1966).Google Scholar
[12] Eriksson, O., Willis, J., Mumford, P. D., Cahay, M., and Friz, W., Physical Review B 57, 4067 (1998).Google Scholar
[13] Zhuze, V. P., Karin, M. G., Lukirskii, D. P., Sergura, V. M. and Shelykh, A. I., Sov. Phys. Sol. State 22, 1558 (1981).Google Scholar
[14] Frankowski, I. and Watcher, P., Solid State Communications 40, 885 (1981).Google Scholar