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Trace Impurities and Metastable States in a-Si:H

Published online by Cambridge University Press:  25 February 2011

Thomas Unold and
J. David Cohen
Thomas Unold
Affiliation:
Department of Physics, University of Oregon, Eugene, Oregon 97403
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, Oregon 97403
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Abstract

The effect of trace amounts of impurities such as carbon and nitrogen on the density of states in undoped a-Si:H has been investigated using drive-level capacitance profiling and transient photocurrent methods. The results indicate a significant correlation between impurity levels and the susceptibility to metastable state creation after light-soaking. We found this correlation to be independent of bandtail broadening and hydrogen content in the material.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990, 719
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Staebler, D.L. and Wronski, C.R., Appl.Phys.Lett. 31, 292 (1977)Google Scholar
2. Crandall, R.S., Carlson, D.E.. Catalano, A., and Weakliem, H.A., Appl.Phys.Lett. 44, 200 (1984)Google Scholar
3. Carlson, D.E., Catalano, A., D’Aiello, R.V., Dickson, C.R.,and Oswald, R.S., in Optical Effects in Amorphous Semiconductors (Snowbird, Utah, 1984)Google Scholar
4. Nakamura, N., Tsuda, S., Takahama, T., Nishikuni, M., Watanabe, K., Ohnishi, M., and Kuwano, Y., in Ref.3, p.234Google Scholar
5. Stutzmann, M., Jackson, W.B., and Tsai, C.C., Phys. Rev. B 32, 23 (1985)Google Scholar
6. Skumanich, A., Amer, N.M., Phys. Rev. B 37, 8465 (1988)Google Scholar
7. Skumanich, A., Amer, N.M., and Jackson, W.B., Phys. Rev. 31, 2263 (1985)Google Scholar
8. Cohen, J.D., Gelatos, A.V., Mahavadi, K.K., and Zellama, K., Solar Cells 24, 287 (1988)Google Scholar
9. Michelson, C.E., Cohen, J.D., Phys. Rev. B 41, 1529 (1990)Google Scholar
10. Lang, D.V., Cohen, J.D., and Harbison, J.P., Phys. Rev. B 25, 5285 (1982)Google Scholar
11. SIMS analysis performed by Sally Asher, SERI also Charles Evans and Associates, Redwood City, CAGoogle Scholar
12. Michelson, C.E., Gelatos, A.V., and Cohen, J.D., Appl. Phys. Lett. 47, 412 (1985)Google Scholar
13. Mahavadi, K.K., Zellama, K., and Cohen, J.D., Phys. Rev. B 35, 7776 (1987).Google Scholar
14. Cohen, J.D. and Lang, D.V., Phys. Rev. B 25, 5321 (1982)Google Scholar
15. Cohen, J.D. and Gelatos, A.V., in Amorphous silicon and related materials,(ed. Fritzsche, H.) (1988) p.475Google Scholar
16. Tsai, C.C., Stuuzmann, M. and Jackson, W.B., in ref.,p.243Google Scholar
17. Cohen, J.D., Michelson, C.E., and Essick, J.M., in Proc. of the Int. Workshop on Amorphous Semiconductors, (ed H.Fritzsche et al) p.279Google Scholar
18. Schubert, M.B., Mohrin, H.-D., Lotter, E., Bauer, G.H., to be publishedGoogle Scholar