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Tritium in Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

L. S. Sidhu,
T. Kosteski,
S. K. O'Leary,
F. Gaspari,
S. Zukotynski,
N. P. Kherani and
W. Shmadya
L. S. Sidhu
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
T. Kosteski
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
S. K. O'Leary
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
F. Gaspari
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
S. Zukotynski
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
N. P. Kherani
Affiliation:
Ontario Hydro Technologies 800 Kipling Avenue, Toronto, Ontario, Canada M8Z 5S4
W. Shmadya
Affiliation:
Ontario Hydro Technologies 800 Kipling Avenue, Toronto, Ontario, Canada M8Z 5S4
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Abstract

Preliminary results on infrared and luminescence measurements of tritium incorporated amorphous silicon are reported. Tritium is an unstable isotope that readily substitutes hydrogen in the amorphous silicon network. Due to its greater mass, bonded tritium is found to introduce new stretching modes in the infrared spectrum. Inelastic collisions between the beta particles, produced as a result of tritium decay, and the amorphous silicon network, results in the generation of excess electron-hole pairs. Radiative recombination of these carriers is observed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996, 509
Copyright
Copyright © Materials Research Society 1996

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References

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