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Ultra-Thin Sputtered Pzt Films for Ulsi Drams

Published online by Cambridge University Press:  21 February 2011

Jiyoung Kim,
C. Sudhama,
Rajesh Khamankar and
Jack Lee
Jiyoung Kim
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
C. Sudhama
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
Rajesh Khamankar
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
Jack Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
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Abstract

In this work, a high-temperature deposition technique has been developed for ultra-thin sputtered PZT films for ULSI DRAM (<256Mb) storage capacitor applications. In contrast to the previously developed low-temperature (200°C) deposition, deposition at high-temperature (400°C) yields a desirable reduction in grain size of the perovskite phase. The thickness of PZT films has been reduced to less than 30nm with high charge storage density (∼30μC/cm2) and low leakage current density. An optimized 65nm PZT thin film was found to have an equivalent SiO2 thickness of 1.9Å and a leakage current density of less than 10−6 A/cm2 under 2V operation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993, 473
Copyright
Copyright © Materials Research Society 1993

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