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Ultraviolet Emitting SrS:Te Thin Films

Published online by Cambridge University Press:  11 February 2011

J.M. Fitz-Gerald,
J. Hoekstra,
J.D. Fowlkes and
P.D. Rack
J.M. Fitz-Gerald
Affiliation:
University of Virginia, Dept of Materials Science and Engineering, 116 Engineer's Way Charlottesville, VA 22904–4745
J. Hoekstra
Affiliation:
University of Virginia, Dept of Materials Science and Engineering, 116 Engineer's Way Charlottesville, VA 22904–4745
J.D. Fowlkes
Affiliation:
University of Tennessee, Department of Materials Science and Engineering, 603 Dougherty Hall, Knoxville, TN 37996–2200
P.D. Rack
Affiliation:
University of Tennessee, Department of Materials Science and Engineering, 603 Dougherty Hall, Knoxville, TN 37996–2200
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Abstract

In the bulk SrS has an indirect bandgap of ∼ 4.32 eV. When SrS is doped with tellurium, ultraviolet emission occurs at 360 nm (for singlet) and 400nm (for Te-Te dimers) due to recombination from bound exciton states. In this paper we discuss the ultraviolet emission of pulsed laser deposited thin films of SrS:Te grown at room temperature on Si. Deposited film thickness ranged from 0.1 – 1.5 mm, with optimized films grown at ∼0.5 mm to avoid peeling and cracking. Te doping was incorporated by both ion implantation and conventional diffusion of deposited Te capping films. The characteristics of the ultraviolet emission will be discussed along with results from microstructural, chemical and optical characterization techniques.

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References

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