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Uniform Quantum Dots by Self-Organizing Process in Atomic Hydrogen-Assisted MBE

Published online by Cambridge University Press:  21 February 2011

Y.-J. Chun,
S. Nakajima,
Y. Okada and
M. Kawabe
Y.-J. Chun
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba City, Ibaraki 305, Japan
S. Nakajima
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba City, Ibaraki 305, Japan
Y. Okada
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
M. Kawabe
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba City, Ibaraki 305, Japan
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Abstract

The effects of atomic hydrogen (H) on formation of In(Ga)As quantum dots (QDs) by self-organizing process have been investigated. The low size fluctuation and uniform-shaped QDs are obtained at growth temperature above 450°C. The average size of InGaAs QDs are decreased from 40 nm to 20 nm by atomic H irradiation. The InGaAs QDs are formed uniformly on growth surface in with-H condition while preferentially formed and distributed along the step edges in without-H case. The photoluminescence (PL) peak intensities and full width at half maximum (FWHM) are also improved by atomic H irradiation. The waiting time before GaAs cap layer deposition is a important factor on the optical properties of QDs.

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References

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