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Unstable Etching Of Si(110)with Potassium Hydroxide

Published online by Cambridge University Press:  17 March 2011

Z. Moktadir,
K. Sato,
T. Shimizu and
M. Shikida
Z. Moktadir
Affiliation:
Department of Microsystem Engineering, Nagoya University, Nagoya, Japan e-mail: Zakaria@kaz.mech.nagoya-u.ac.jp Tel: +81 52 789 5289, Fax: +81 52 789 5032
K. Sato
Affiliation:
Department of Microsystem Engineering, Nagoya University, Nagoya, Japan e-mail: Zakaria@kaz.mech.nagoya-u.ac.jp Tel: +81 52 789 5289, Fax: +81 52 789 5032
T. Shimizu
Affiliation:
Department of Microsystem Engineering, Nagoya University, Nagoya, Japan e-mail: Zakaria@kaz.mech.nagoya-u.ac.jp Tel: +81 52 789 5289, Fax: +81 52 789 5032
M. Shikida
Affiliation:
Department of Microsystem Engineering, Nagoya University, Nagoya, Japan e-mail: Zakaria@kaz.mech.nagoya-u.ac.jp Tel: +81 52 789 5289, Fax: +81 52 789 5032
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Abstract

We present the experimental data for the morphological evolution of Si(110) etched with Potassium Hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching, which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.

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References

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