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Unusual Surface Undulations Observed in Ge/Si(100) Multilayers

Published online by Cambridge University Press:  17 March 2011

Woei Wu Pai,
Y. H. Peng,
W. F. Chung,
S. Y. Wang,
K. N. Chen and
H. H. Cheng
Woei Wu Pai
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan 106
Y. H. Peng
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan 106
W. F. Chung
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan 106
S. Y. Wang
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan 106
K. N. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan 106
H. H. Cheng
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan 106
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Abstract

Multilayer Ge/Si quantum wells grown on Si(100) at lower temperatures (300 C for Ge and 435 C for Si) exhibit unexpected large surface undulations. These groove-like features along <110> directions are correlated to the underlying dislocation networks. Studies on the dependence of surface roughness versus Ge spacer thickness exclude kinetic limitation as the cause of the observed troughs. Further comparison of the surfaces for multilayer and single-layer samples indicates a combination of the multilayer structure and the inhomogeneous surface strain field greatly enhances the undulations.

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