Hostname: page-component-7b7567c8c-wxvwp Total loading time: 0 Render date: 2026-11-14T09:55:27.135Z Has data issue: false hasContentIssue false

Using Atomic Steps to Control Pentacene Crystal Orientation Texture

Published online by Cambridge University Press:  26 February 2011

Valerian Ignatescu
Affiliation:
vi22@cornell.edu, Cornell University, Materials Science and Engineering, B60 Bard Hall, Ithaca, NY, 14853, United States
Jing-Chih M. Hsu
Affiliation:
jmh233@cornell.edu, Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
Alex C. Mayer
Affiliation:
acmayer@stanford.edu, Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
Jack M. Blakely
Affiliation:
blakely@ccmr.cornell.edu, Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
George G. Malliaras
Affiliation:
ggm1@cornell.edu, Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
Get access

Abstract

We have studied the effect of substrate atomic steps on the azimuthal alignment of vapor-deposited pentacene crystals. Si(111) substrates with a low miscut angle were annealed at high temperature in ultra-high vacuum before the pentacene deposition; this produced surfaces with atomically flat terraces and arrays of parallel atomic steps. AFM analysis shows that pentacene deposited on these heated samples, at a low deposition rate, results in significant alignment of the pentacene crystals along the atomic steps.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable