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Vertical-Cavity Optoelectronic Structures: CAD, Growth, and Structural Characterization

Published online by Cambridge University Press:  25 February 2011

D. H. Christensen,
S. M. Crochiere,
J. G. Pellegrino,
R. S. Rai,
C. A. Parsons,
W. F. Tseng and
R. K. Hickernell
D. H. Christensen
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303
S. M. Crochiere
Affiliation:
Bandgap Technology Corporation, Broomfield, CO 80021
J. G. Pellegrino
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
R. S. Rai
Affiliation:
Bandgap Technology Corporation, Broomfield, CO 80021
C. A. Parsons
Affiliation:
Bandgap Technology Corporation, Broomfield, CO 80021
W. F. Tseng
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
R. K. Hickernell
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303
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Abstract

Simulations of reflectance spectra and electric field distributions for vertical-cavity structures were used in the computer aided design of epitaxial mirrors and lasers. The binary GaAs/AlAs superlattice alloys and AlxGa1−xAs random alloys that compose these structures were grown by molecular beam epitaxy. Photoluminescence, photoreflectance, reflectance spectroscopy, scanning electron microscopy, transmission electron microscopy, and double crystal x-ray diffractometry were applied to characterize cavity and Bragg mirror layer thicknesses and alloy composition.

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