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Wide Bandgap Semiconductor Power Devices

Published online by Cambridge University Press:  10 February 2011

T. P. Chow,
N. Ramungul and
M. Ghezzo
T. P. Chow
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180–3590, chow@unix.cie.rpi.edu
N. Ramungul
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180–3590, chow@unix.cie.rpi.edu
M. Ghezzo
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12301, ghezzo@crdgw2.crd.ge.com
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Abstract

The present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997, 89
Copyright
Copyright © Materials Research Society 1998

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