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X-band Silicon Carbide IMPATT Oscillator

Published online by Cambridge University Press:  21 March 2011

Konstantin V. Vassilevski,
Alexandr V. Zorenko and
Konstantinos Zekentes
Konstantin V. Vassilevski
Affiliation:
Ioffe Institute, St. Petersburg, 194021, Russian Federation Electronic mail: kvv@pop.ioffe.rssi.ru
Alexandr V. Zorenko
Affiliation:
State Scientific & Research Institute “Orion”, Kyiv, 03057, Ukraine
Konstantinos Zekentes
Affiliation:
Microelectronics Research Group, FORTH, Heraklion, 711 10, Greece
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Abstract

Pulsed X-band (8.2 - 12.4 GHz) IMPATT oscillators have been fabricated and characterized. They utilized 4H-SiC diodes with single drift p+-n-n+ structures and avalanche breakdown voltages of about 290 V. The microwave oscillations appeared at a threshold current of 0.3 A. The maximum measured output power was about 300 mW at input pulse current of 0.35 A and pulse duration of 40 ns.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001, E10.11
Copyright
Copyright © Materials Research Society 2001

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