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X-Ray Diffraction Studies of Low Temperature GaAs

Published online by Cambridge University Press:  15 February 2011

G. Kowaljki,
M. Leszcjynski,
A. Kurpiewski,
M. Kaminska,
T. Suski and
E. R. Weber
G. Kowaljki
Affiliation:
Institute of Experimental Physics, Warsaw University, Warsaw, Poland
M. Leszcjynski
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland
A. Kurpiewski
Affiliation:
Institute of Experimental Physics, Warsaw University, Warsaw, Poland
M. Kaminska
Affiliation:
Institute of Experimental Physics, Warsaw University, Warsaw, Poland
T. Suski
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland
E. R. Weber
Affiliation:
Department of Materials Science, University of California, Berkeley, USA.
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Abstract

GaAs layers grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) were studied in a novel purpose designed X-ray experiment. It combines X-ray double crystal rocking curve measurements with some elements usually found in optical setups like light illumination at liquid nitrogen temperatures applied to transfer EL2 type defects into metastable state. Ability to record such transfers with the X-ray experiment as well as large lattice relaxation accompanying this process is presented.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991, 125
Copyright
Copyright © Materials Research Society 1992

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References

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